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L2SA812LT1 Datasheet(PDF) 1 Page - Leshan Radio Company |
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L2SA812LT1 Datasheet(HTML) 1 Page - Leshan Radio Company |
1 / 5 page General Purpose Transistors MAXIMUM RATINGS Symbol L2SA812 Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6 V Collector current-continuoun IC -150 mAdc THERMAL CHARATEERISTICS Symbol Max Unit Total Device Dissipation FR-5 Board, (1) PD 200 mW 1.8 mW/ oC Thermal Resistance, Junction to Ambient R θJA 556 oC/W PD 200 mW 2.4 mW/ oC Thermal Resistance, Junction to Ambient R θJA 417 oC/W Junction and Storage Temperature Tj ,Tstg -55 to +150 oC Total Device Dissipation Derate above 25 oC Rating TA=25 oC Derate above 25 oC Alumina Substrate, (2) TA=25 oC Characteristic L2SA812-1/5 LESHAN RADIO COMPANY, LTD. 1 3 2 L2SA812*LT1 SOT-23 2 EMITTER 3 COLLECTOR 1 BASE FEATURE High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC1623 Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking L2SA812QLT1 M8 L2SA812QLT1G M8 (Pb-Free) L2SA812RLT1 M6 L2SA812RLT1G M6 (Pb-Free) L2SA812SLT1 M7 L2SA812SLT1G M7 (Pb-Free) 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel |
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