L2N5401 datasheet(2/4 Pages) LRC

Part #	L2N5401

Description	Amplifier Transistors PNP Silicon

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Manufacturer	LRC [Leshan Radio Company]

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LESHAN RADIO COMPANY, LTD.

L2N5401-2/4

L2N5401

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage(1)

(IC = 1.0 mAdc, IB =0)

V(BR)CEO

150

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE =0)

V(BR)CBO

160

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector Cutoff Current

(VCB = 120 Vdc, IE =0)

(VCB = 120 Vdc, IE = 0, TA = 100°C)

ICBO

−

50

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

IEBO

−

50

nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc)

(IC = 50 mAdc, VCE = 5.0 Vdc)

hFE

50

60

50

−

240

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

−

0.2

0.5

Vdc

Base−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat)

−

1.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)

fT

100

300

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

6.0

pF

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

40

200

−

Noise Figure

(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

NF

−

8.0

dB

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

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