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LDTC124XM3T5G Datasheet(PDF) 1 Page - Leshan Radio Company |
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LDTC124XM3T5G Datasheet(HTML) 1 Page - Leshan Radio Company |
1 / 10 page LESHAN RADIO COMPANY, LTD. LDTC114EM3T5G_S-1/10 Bias Resistor Transistors NPN Silicon Surface Mount Transistors With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-723 package which is designed for low power surface mount applications. LDTC114EM3T5G MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25 °C PD 260 (Note 1) 600 (Note 2) 2.0 (Note 1) 4.8 (Note 2) mW Thermal Resistance – Junction-to-Ambient RθJA 480 (Note 1) 205 (Note 2) °C/W Storage Temperature Range Tstg –55 to +150 °C xx = Specific Device Code M = Date Code MARKING DIAGRAM 3 2 1 XX M mW/ °C Simplifies Circuit Design Reduces Component Count The SOT-723 Package can be Soldered using Wave or Reflow. Available in 4 mm, 8000 Unit Tape & Reel These are Pb-Free Devices. Reduces Board Space Version 1.0 Series SOT-723 1 2 3 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) PIN 1 BASE (INPUT) R1 R2 °C TJ 150 Junction Temperature 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad |
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