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MSM51V4221C-40RD Datasheet(PDF) 5 Page - OKI electronic componets |
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MSM51V4221C-40RD Datasheet(HTML) 5 Page - OKI electronic componets |
5 / 16 page FEDS51V4221C-03 1Semiconductor MSM51V4221C 5/16 OPERATION Write Operation The write operation is controlled by three clocks, SWCK, RSTW, and WE. Write operation is accomplished by cycling SWCK, and holding WE high after the write address pointer reset operation or RSTW. Each write operation, which begins after RSTW, must contain at least 130 active write cycles, i.e. SWCK cycles while WE is high. To transfer the last data to the DRAM array, which at that time is stored in the serial data registers attached to the DRAM array, an RSTW operation is required after the last SWCK cycle. Write Reset: RSTW The first positive transition of SWCK after RSTW becomes high resets the write address counters to zero. RSTW setup and hold times are referenced to the rising edge of SWCK. Because the write reset function is solely controlled by the SWCK rising edge after the high level of RSTW, the states of WE are ignored in the write reset cycle. Before RSTW may be brought high again for a further reset operation, it must be low for at least two SWCK cycles. Data Inputs: D IN0 to 3 Write Clock: SWCK The SWCK latches the input data on chip when WE is high, and also increments the internal write address pointer. Data-in setup time t DS, and hold time tDH are referenced to the rising edge of SWCK. Write Enable: WE WE is used for data write enable/disable control. WE high level enables the input, and WE low level disables the input and holds the internal write address pointer. There are no WE disable time (low) and WE enable time (high) restrictions, because the MSM51V4221C is in fully static operation as long as the power is on. Note that WE setup and hold times are referenced to the rising edge of SWCK. |
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