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IR01H420-P2 Datasheet(PDF) 4 Page - International Rectifier |
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IR01H420-P2 Datasheet(HTML) 4 Page - International Rectifier |
4 / 7 page 4 IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. Switching time waveform definitions are shown in figure 2. Symbol Definition Min. Typ. Max. Units Test Conditions ton Turn-On Propagation Delay (see note 2) — 130 200 Vs = 0V toff Turn-Off Propagation Delay (see note 2) — 90 200 Vs = 500V tr Turn-On Rise Time (see note 2) — 80 120 ns tf Turn-Off Fall Time (see note 2) — 40 70 MT Delay Matching, HS & LS Turn-On/Off — 30 — trr Reverse Recovery Time (MOSFET Body Diode) — 260 — IF = 0.7A Qrr Reverse Recovery Charge (MOSFET Body Diode) — 0.7 — µC di/dt = 100 A/us Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input voltage. This is shown as HO in figure 2. Static Electrical Characteristics VBIAS (VCC, VB) = 15V and TA = 25°C unless otherwise specified. The Input voltage and current levels are referenced to COM. Symbol Definition Min. Typ. Max. Units Test Conditions VCCUV+ VCC Supply Undervoltage Positive Going 8.8 9.3 9.8 V Threshold VCCUV- VCC Supply Undervoltage Negative Going 7.5 8.2 8.6 V Threshold IQCC Quiescent VCC Supply Current — 140 240 µA IQBS Quiescent VBS Supply Current — 20 50 µA Ios Offset Supply Leakage Current — — 50 µA VB = VS = 500V VIH Logic “1” Input Voltage 2.7 — — V VCC = 10V to 20V VIL Logic “0” Input Voltage — — 0.8 V VCC = 10V to 20V IIN+ Logic “1” Input Bias Current — 20 40 IIN- Logic “0” Input Bias Current — — 1.0 Rds(on) Static Drain-to-Source On-Resistance 214 — 2.0 — Ω Id=850mA/TJ=150 o C 224 — 1.1 — Ω Id=1.1A/TJ=150 o C 420 — 3.0 — Ω Id=700mA/TJ=150 o C VSD Diode Forward Voltage 214/420 — 0.8 — V Id=700mA/TJ=150 o C 224 — 0.85 — Id=1.1A/TJ=150 o C V V V CC = 10V to 20V µA |
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