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KM68B261A Datasheet(PDF) 2 Page - Samsung semiconductor |
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KM68B261A Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 7 page KM68B261A BiCMOS SRAM Rev 2.0 October-1994 2 Stresses greater than those listed under "Absolute Maximum Rating" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Parameter Symbol Rating Unit Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature Operating Temperature VIN,OUT Vcc PD Tstg TA - 0.5 to 7.0 - 0.5 to 7.0 1.0 - 65 to 150 0 to 70 V V W °C °C ABSOLUTE MAXIMUM RATINGS* * RECOMMENDED DC OPERATING CONDITIONS (TA=0to70°C) Parameter Symbol Min Typ. Max Unit Supply Voltage Ground Input Low Voltage Input High Voltage Vcc Vss VIH VIL 4.75 0 2.2 -0.5* 5.0 0 - - 5.25 0 Vcc+0.5** 0.8 V V V V * VIL(Min) = -2.0 (Pulse Width for I ** VIH(Max) = Vcc+2.0V(Pulse width for I ≤3ns) ≤ 8ns) ≤ 20mA ≤ 20mA Parameter Symbol Test Conditions Min Max Unit Input Leakage Current Output Leakage Current Operating Current Standby Current Output Low Voltage Output High Voltage VIN=Vss to Vcc /CS=VIH or /OE=VIH or /WE=VIL VOUT=VSS to Vcc f=100MHz, 100% Duty, /CS=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, /CS=VIH f=0MHz, /CS -0.2V, VIN -0.2V or VIN IOL=8mA IOH = - 4mA ILI ILO ICC ISB ISB1 VOL VOH -10 -10 - - - - 2.4 10 10 170 110 20 0.4 - µA µA mA mA mA V V ≥ Vcc ≤ 0.2V DC AND OPERATING CHARACTERISTICS (TA= 0 to 70°C, Vcc=5 V 5%, unless otherwise specified) ± ≥ Vcc |
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