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AP9575H Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP9575H Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 4 page AP9575H/J Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0.1 1 10 100 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) 100us 1ms 10ms 100ms DC T C =25 o C Single Pulse 0 2 4 6 8 10 12 0 10203040 Q G , Total Gate Charge (nC) I D = -9A V DS = -48V 10 100 1000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse |
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