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IRHMS63164 Datasheet(PDF) 1 Page - International Rectifier |
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IRHMS63164 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 45* ID @ VGS = 12V, TC = 100°C Continuous Drain Current 44 IDM Pulsed Drain Current À 180 PD @ TC = 25°C Max. Power Dissipation 208 W Linear Derating Factor 1.67 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 353 mJ IAR Avalanche Current À 45 A EAR Repetitive Avalanche Energy À 20.8 mJ dv/dt Peak Diode Recovery dv/dt  8.2 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 9.3 (Typical) g oC A 12/22/05 www.irf.com 1 * Current is limited by package For footnotes refer to the last page Pre-Irradiation TO-254AA Low-Ohmic Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight TECHNOLOGY RADIATION HARDENED IRHMS67164 POWER MOSFET 150V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Product Summary Part Number Radiation Level RDS(on) ID IRHMS67164 100K Rads (Si) 0.019 Ω 45A* IRHMS63164 300K Rads (Si) 0.019 Ω 45A* PD-96958 |
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