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STS20NHS3LL
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Table 3: Absolute Maximum ratings
Table 4: Thermal Data
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (TJ =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On /Off
Table 7: Dynamic
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VGS
Gate- source Voltage
± 18
V
ID(1)
Drain Current (continuous) at TC = 25°C
20
A
ID
Drain Current (continuous) at TC = 100°C
12.6
A
IDM(2)
Drain Current (pulsed)
80
A
Ptot
Total Dissipation at TC = 25°C
2.7
W
Rthj-amb (3)
Tj
Tstg
Thermal Resistance Junction-ambient Max
Maximum Operating Junction Temperature
Storage Temperature
47
-55 to 150
-55 to 150
°C/W
°C
°C
Symbol
Parameter
Max Value
Unit
IAV
Not-Repetitive Avalanche Current
(pulse width limited by Tj max)
12.5
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25°C, ID = IAV, VDD = 24V)
1.3
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
30
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = 24V
500
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 18V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1mA
1
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 10A
0.0032
0.004
0.004
0.0055
Ω
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (4)
Forward Transconductance
VDS=15V, ID = 12A
30
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1MHz,
VGS = 0
3950
720
70
pF
pF
pF