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4135-51 Datasheet(PDF) 2 Page - Peregrine Semiconductor Corp. |
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4135-51 Datasheet(HTML) 2 Page - Peregrine Semiconductor Corp. |
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2 / 9 page  ©2005 Peregrine Semiconductor Corp. All rights reserved. Product Specification PE4135 Page 2 of 9 Document No. 70-0086-04 │ www.psemi.com Table 2. Pin Descriptions Table 3. Absolute Maximum Ratings Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS™ device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 3. Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOS™ devices are immune to latch-up. Figure 3. Pin Configuration (Top View) Absolute Maximum Ratings are those values listed in the above table. Exceeding these values may cause permanent device damage. Functional operation should be restricted to the limits in the DC Electrical Specifications table. Exposure to absolute maximum ratings for extended periods may affect device reliability. PE4135 IF1 GND LO IF2 GND RF 4 5 6 3 2 1 Pin No. Pin Name Description 1 IF1 IF differential output. 2 GND Ground connections for Mixer. Traces should be physically short and connect immediately to ground plane for best performance. The exposed solder pad must also be soldered to the ground plane for best performance. 3 LO LO Input. 4 RF RF Input. 5 GND Ground connections for Mixer. Traces should be physically short and connect immediately to ground plane for best performance. The exposed solder pad must also be soldered to the ground plane for best performance. 6 IF2 IF differential output. Symbol Parameter/Conditions Min Max Units TST Storage temperature range -65 150 °C TOP Operating temperature range -40 85 °C PLO LO input power 20 dBm PRF RF input power 12 dBm VESD ESD Sensitive Device 250 V |
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