Schottky Barrier Diodes (SBD)

1

Publication date: August 2001

SKH00067AED

MA3SE02

Silicon epitaxial planar type

For cellular phone

I Features

• High-frequency wave detection is possible

• Low forward voltage V

F

• Small terminal capacitance C

t

• SS-Mini type 3-pin package

I Absolute Maximum Ratings T

Marking Symbol: M6B

I Absolute Maximum Ratings T

Internal Connection

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

= 15 V

200

nA

Forward voltage (DC)

= 1 mA

0.40

V

1.0

Terminal capacitance

= 0 V, f = 1 MHz

1.2

pF

Forword dynamic resistance

= 5 mA

9

Ω

12

3

1 : Anode 1

2 : Cathode 2

3 : Cathode 1

Anode 2

EIAJ : SC-89

SSMini3-F2 Package

Unit: mm

3

12

(0.80)

1.60

+0.05

–0.03

0.12

+0.05

–0.02

0.60

+0.05

–0.03

(0.80)

(0.51)

(0.51)

3

°

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

20

V

Peak reverse voltage

20

V

Forward current (DC)

Single

35

mA

Series

 

25

Peak forward current

Single

100

mA

Series

 

70

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

2. Rated input/output frequency: 2 GHz