AS4C14400-60JC datasheet(1/16 Pages) ALSC

Part #	AS4C14400-60JC

Description	1M-bit 횞 4 CMOS DRAM (Fast page mode or EDO)

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Manufacturer	ALSC [Alliance Semiconductor Corporation]

Direct Link	https://www.alliancememory.com

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ALLIANCE SEMICONDUCTOR

High Performance

1M×4

CMOS DRAM

AS4C14400

AS4C14405

®

1M-bit × 4 CMOS DRAM (Fast page mode or EDO)

Preliminary information

Features

• Organization: 1,048,576 words × 4 bits

• High speed

- 40/50/60/70 ns RAS access time

- 20/25/30/35 ns column address access time

- 10/13/15/18 ns CAS access time

• Low power consumption

- Active:

385 mW max (-60)

- Standby: 5.5 mW max, CMOS I/O

• Fast page mode (AS4C14400) or EDO (AS4C14405)

• 1024 refresh cycles, 16 ms refresh interval

- RAS-only or CAS-before-RAS refresh

• Read-modify-write

• TTL-compatible, three-state I/O

• JEDEC standard packages

- 300 mil, 20/26-pin SOJ

- 300 mil, 20/26-pin TSOP

• Single 5V power supply

• ESD protection

≥ 2001V

• Latch-up current

≥ 200 mA

Pin arrangement

GND

I/O3

I/O2

CAS

OE

A8

A7

I/O0

I/O1

WE

RAS

A9

A0

A1

TSOP

A6

A5

A4

A2

A3

VCC

1

2

3

4

5

9

10

26

25

24

23

22

18

17

11

12

13

16

15

14

GND

I/O3

I/O2

CAS

OE

A8

A7

I/O0

I/O1

WE

RAS

A9

A0

A1

A6

A5

A4

A2

A3

VCC

1

2

3

4

5

9

10

26

25

24

23

22

18

17

11

12

13

16

15

14

SOJ

Pin designation

Pin(s)

Description

A0 to A9

Address inputs

RAS

Row address strobe

I/O0 to I/O3

Input/output

OE

Output enable

CAS

Column address strobe

WE

Read/write control

VCC

Power (5.0

± 0.5V)

GND

Ground

Selection guide

Shaded areas contain advance information.

Symbol

4C14400-40

4C14400-50

4C14400-60

4C14400-70

Unit

Maximum RAS access time

tRAC

40

50

60

70

ns

Maximum column address access time

tCAA

20

25

30

35

ns

Maximum CAS access time

tCAC

10

13

15

18

ns

Maximum output enable (OE) access time

tOEA

10

13

15

18

ns

Minimum read or write cycle time

tRC

70

90

110

130

ns

Minimum fast page mode cycle time

tPC

30

35

40

45

ns

Maximum operating current

ICC1

90

80

70

60

mA

Maximum CMOS standby current

ICC5

1.0

mA

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