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W964B6BBN80 Datasheet(PDF) 7 Page - Winbond |
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W964B6BBN80 Datasheet(HTML) 7 Page - Winbond |
7 / 30 page W964B6BBN 8. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings PARAMETER SYMBOL VALUE UNIT Voltage of VDD Supply Relative to VSS VDD -0.5 to +3.6 V Voltage at Any Pin Relative to VSS VIN, VOUT -0.5 to +3.6 V Short Circuit Output Current IOUT ±50 mA Storage Temperature TSTG -55 to +125 °C WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. Recommended Operation Conditions (Reference to VSS) PARAMETER NOTES SYMBOL MIN. MAX. UNIT VDD 2.3 2.7 V Supply Voltage VSS 0 0 V High Level Input Voltage *1 VIH 2.0 VDD +0.3 V Low Level Input Voltage *2 VIL -0.3 0.4 V Ambient Temperature TA 0 70 °C Ambient Temperature TA -25 85 °C Ambient Temperature TA -40 85 °C Notes: *1: Maximum DC voltage on input and I/O pins are VDD +0.3V. During voltage transitions, inputs may positive overshoot to VDD +1.0V for periods of up to 5 nS. *2: Minimum DC voltage on input and I/O pins are -0.3V. During voltage transitions, inputs may negative overshoot to - 1.0V for periods of up to 5 nS. WARNING: Recommended operating conditions are normal operating ranges for the semiconductor device. All the device’s electrical characteristics are warranted when operated within these ranges. Always use semiconductor devices within the recommended operating conditions. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the datasheet. Users considering application outside the listed conditions are advised to contact their Winbond representative beforehand. Publication Release Date: March 31, 2003 - 7 - Revision A1 |
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