K6F2016U4D-FF70 datasheet(6/9 Pages) SAMSUNG

Part #	K6F2016U4D-FF70

Description	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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6 / 9 page

Revision 1.0

CMOS SRAM

May 2000

K6F2016U4D Family

- 6 -

Address

Data Out

Previous Data Valid

Data Valid

TIMMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, UB or/and LB=VIL)

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

Data Valid

High-Z

tRC

CS

Address

UB, LB

OE

Data out

tAA

tRC

tOH

tAA

tCO

tBA

tOE

tOLZ

tBLZ

tLZ

tOHZ

tBHZ

tHZ

NOTES (READ CYCLE)

1.

tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition,

tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

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K6F2016U4D-FF70 Datasheet(PDF) 6 Page - Samsung semiconductor

K6F2016U4D-FF70 Datasheet(HTML) 6 Page - Samsung semiconductor

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