K6F2016U4D-F datasheet(4/9 Pages) SAMSUNG

Part #	K6F2016U4D-F

Description	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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4 / 9 page

Revision 1.0

CMOS SRAM

May 2000

K6F2016U4D Family

- 4 -

DC AND OPERATING CHARACTERISTICS

1. Super low power product=3

µA with special handling

Item

Symbol

Test Conditions

Min

Typ

Max

Unit

Input leakage current

ILI

VIN=Vss to Vcc

-1

-

1

µA

Output leakage current

ILO

CS=VIH or OE=VIH or WE=VIL, VIO=Vss to Vcc

-1

-

1

µA

Operating power supply current

ICC

IIO=0mA, CS=VIL, VIN=VIH or VIL

-

2

mA

Average operating current

ICC1

Cycle time=1

µs, 100%duty, IIO=0mA, CS≤0.2V, VIN≤0.2V or VIN≥VCC-0.2V

-

4

mA

ICC2

Cycle time=Min, IIO=0mA

, 100% duty, CS=VIL, VIN=VIH or VIL

-

35

mA

Output low voltage

VOL

IOL = 2.1mA

-

0.4

V

Output high voltage

VOH

IOH = -1.0mA

2.4

-

V

Standby Current(TTL)

ISB

CS=VIH or LB=UB=VIH, Other inputs=VIH or VIL

-

0.3

mA

Standby Current (CMOS)

ISB1

CS

≥Vcc-0.2V or LB=UB≥Vcc-0.2V, CS≤0.2V, Other inputs=0~Vcc

-

0.5

101)

µA

RECOMMENDED DC OPERATING CONDITIONS1)

Note:

1. TA=-40 to 85

°C, otherwise specified.

2. Overshoot: Vcc+2.0V in case of pulse width

≤20ns.

3. Undershoot: -2.0V in case of pulse width

≤20ns.

4. Overshoot and undershoot are sampled, not 100% tested.

Item

Symbol

Min

Typ

Max

Unit

Supply voltage

Vcc

2.7

3.0

3.3

V

Ground

Vss

0

V

Input high voltage

VIH

2.2

-

Vcc+0.22)

V

Input low voltage

VIL

-0.23)

-

0.6

V

CAPACITANCE1) (f=1MHz, TA=25

°C)

1. Capacitance is sampled, not 100% tested.

Item

Symbol

Test Condition

Min

Max

Unit

Input capacitance

CIN

VIN=0V

-

8

pF

Input/Output capacitance

CIO

VIO=0V

-

10

pF

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