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K7I641882M-EI25 Datasheet(PDF) 2 Page - Samsung semiconductor |
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K7I641882M-EI25 Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 17 page 2Mx36 & 4Mx18 DDRII CIO b2 SRAM K7I643682M K7I641882M - 2 - Rev 1.0 Aug. 2005 Document Title 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 1.0 Remark Advance Preliminary Preliminary Preliminary Preliminary Final History 1. Initial document. 1. Correct the JTAG ID register definition 2. Correct the AC timing parameter (delete the tKHKH Max value) 1. Add the Power-on Sequence specification 1. Correct the pin name table 1. Update the power consumption (Icc & Isb) 1. Finalize the datasheet Draft Date Mar. 9, 2003 Mar. 20, 2003 Aug. 16, 2004 Oct. 18, 2004 May. 17, 2005 Aug. 2, 2005 |
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