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SPP46N03 Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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SPP46N03 Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
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8 / 9 page  8 Semiconductor Group SPP46N03 Typ. gate charge VGS = f (QGate) parameter: ID puls = 46 A 0 10 20 30 40 nC 60 QGate 0 2 4 6 8 10 12 V 16 SPP46N03 DS max V 0,8 DS max V 0,2 Avalanche Energy EAS = f (Tj) parameter: ID = 46 A, VDD = 25 V RGS = 25 Ω 20 40 60 80 100 120 140 °C 180 Tj 0 50 100 150 mJ 250 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj 27 28 29 30 31 32 33 34 35 V 37 SPP46N03 |
Similar Part No. - SPP46N03 |
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Similar Description - SPP46N03 |
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