RN1101F

~RN1106F

2001-02-08 1/7

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101F,RN1102F,RN1103F

RN1104F,RN1105F,RN1106F

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2101F~RN2106F

Equivalent Circuit And Bias Resister Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1101F~1106F

50

V

RN1101F~1104F

10

Emitter-base voltage

RN1105F, 1106F

5

V

Collector current

100

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

RN1101F~1106F

−55~150

°C

JEDEC

―

EIAJ

―

TOSHIBA

2-2H1A

Weight: 2.3 mg

Unit in mm

Type No.

R1 (kΩ)

R2 (kΩ)

RN1101F

4.7

4.7

RN1102F

10

10

RN1103F

22

22

RN1104F

47

47

RN1105F

2.2

47

RN1106F

4.7

47

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can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

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Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

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000707EAA2