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P12NK60Z Datasheet(PDF) 3 Page - STMicroelectronics |
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P12NK60Z Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page 3/12 STP12NK60Z - STF12NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Table 8: Dynamic Table 9: Source Drain Diode Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 5 A 0.53 0.64 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =10 V, ID = 5 A 9 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1740 195 49 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480 V 101 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 300 V, ID = 5 A RG = 4.7Ω VGS = 10 V (see Figure 19) 22.5 18.5 55 31.5 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480 V, ID = 10 A, VGS = 10 V (see Figure 22) 59 10 32 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 10 40 A A VSD (1) Forward On Voltage ISD = 10 A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10 A, di/dt = 100 A/µs VDD = 50 V, Tj = 25°C (see test circuit, Figure 5) 358 3 17 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150°C (see test circuit, Figure 5) 460 4.2 18.2 ns µC A |
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