2N6213 datasheet(1/2 Pages) MICROSEMI

Part #	2N6213

Description	PNP HIGH POWER SILICON TRANSISTOR

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA

PNP HIGH POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/461

Devices

Qualified Level

2N6211

2N6212

2N6213

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol 2N6211 2N6212 2N6213 Unit

Collector-Emitter Voltage

VCEO

225

300

350

Vdc

Collector-Base Voltage

VCBO

275

350

400

Vdc

Emitter-Base Voltage

VEBO

6.0

Vdc

Base Current

IB

1.0

Adc

Collector Current

IC

2.0

Adc

Total Power Dissipation

@ TA = +25

0C (1)

@ TC = +25

0C (2)

PT

3.0

35

W

Operating & Storage Temperature

Top, Tstg

-55 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance Junction-to-Case

RθJC

5.0

0C/W

1)

Derate linearly 17.1 mW/

0C for TA > +250C

2)

Derate linearly 200 mW/

0C for TC > +250C

TO-66*

(TO-213AA)

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (TC = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 200 mAdc, f = 30-60 Hz

2N6211

2N6212

2N6213

V(BR)CEO

225

300

350

Vdc

Collector-Emitter Breakdown Voltage

IC = 200 mAdc, f = 30-60 Hz, RBE = 50 Ω

2N6211

2N6212

2N6213

V(BR)CER

250

325

375

Vdc

Collector-Emitter Breakdown Voltage

IC = 200 mAdc, f = 30-60 Hz, RBE = 50 Ω, VBE = -1.5 Vdc

2N6211

2N6212

2N6213

V(BR)CEX

275

350

400

Vdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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