PD-91394E datasheet(1/8 Pages) IRF

Part #	PD-91394E

Description	RADIATION HARDENED POWER MOSFET THRU - HOLE ( TO - 254AA )

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Manufacturer	IRF [International Rectifier]

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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current

18

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

11.7

IDM

Pulsed Drain Current ➀

72

PD @ TC = 25°C

Max. Power Dissipation

250

W

Linear Derating Factor

2.0

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

500

mJ

IAR

Avalanche Current ➀

18

A

EAR

Repetitive Avalanche Energy ➀

25

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

3.8

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from case for 10 sec.)

Weight

9.3 (Typical)

g

Pre-Irradiation

oC

A

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

5/17/01

www.irf.com

1

TO-254AA

Product Summary

Part Number

Radiation Level

Part Number

Radiation Level

Part Number

Radiation Level

Part Number

Radiation Level

Part Number

Radiation Level R

R

RDS(on)

DS(on)

IIIII DDDDD

QPL Part Number

IRHM7460SE

100K Rads (Si)

0.32Ω

18A

JANSR2N7392

Features:

!

Single Event Effect (SEE) Hardened

!

Ultra Low RDS(on)

!

Low Total Gate Charge

!

Proton Tolerant

!

Simple Drive Requirements

!

Ease of Paralleling

!

Hermetically Sealed

!

Light Weight

For footnotes refer to the last page

IRHM7460SE

JANSR2N7392

JANSR2N7392 500V

500V

N-CHANNEL

REF: MIL-PRF-19500/661

RAD Hard

HEXFET

® TECHNOLOGY

TECHNOLOGY

International Rectifiers RADHardTM HEXFET® MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

PD - 91394E

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