IRHQ567110

Pre-Irradiation

4

www.irf.com

Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ➄➅

Parameter

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

100

—

100

—

V

Gate Threshold Voltage

2.0

4.0

2.0

4.0

Gate-to-Source Leakage Forward

—

100

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

—

-100

Zero Gate Voltage Drain Current

—

10

—

10

µA

Static Drain-to-Source

➃

—

0.226

—

0.246

Ω

On-State Resistance (TO-39)

Static Drain-to-Source

➃

—

0.27

—

0.29

Ω

On-State Resistance (LCC-28)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

1. Part number IRHQ567110

2. Part number IRHQ563110

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

➃

—

1.2

—

1.2

V

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area (Per Die)

Ion

LET

Energy

Range

V

DS

(V)

(MeV)

(µm) @V

GS

=0V @V

GS

=-5V @V

GS

= -8V @V

GS

=-10V @V

GS

=-15V

Br

36.7

309

39.5

100

100

100

100

100

I

59.8

341

32.5

100

100

100

100

35

Au

82.3

350

28.4

100

100

100

80

25

@V

GS

=-20V

100

25

—

0

20

40

60

80

100

120

-20

-15

-10

-5

0

VGS

Br

I

Au