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2SB1734 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SB1734 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page Transistors 1 Publication date: November 2004 SJC00322AED 2SB1734 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2706 ■ Features • High forward current transfer ratio h FE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. ■ Absolute Maximum Ratings T a = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −5V Collector current IC −200 mA Peak collector current ICP −400 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, I E = 0 −50 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, I E = 0 − 0.1 µA Forward current transfer ratio hFE VCE = −10 V, IC = −2 mA 85 500 Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −10 mA −300 mV Transition frequency fT VCB = −10 V, I E = 1 mA, f = 200 MHz 80 MHz Collector output capacitance Cob VCB = −10 V, I E = 0, f = 1 MHz 3 pF (Common base, input open circuited) ■ Electrical Characteristics T a = 25°C ± 3°C 0.40 +0.10 –0.05 2 1 3 (0.95) (0.95) 1.9±0.1 2.90 +0.20 –0.05 0.16 +0.10 –0.06 10˚ Unit: mm 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: AF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. |
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