PRELIMINARY
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
with NoBL™ Architecture
CY7C1354CV25
CY7C1356CV25
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
, CA 95134
•
408-943-2600
Document #: 38-05537 Rev. *B
Revised November 1, 2004
Features
• Pin-compatible with and functionally equivalent to
ZBT™
• Supports 225-MHz bus operations with zero wait states
— Available speed grades are 225, 200, and 167 MHz
• Internally self-timed output buffer control to eliminate
the need to use asynchronous OE
• Fully registered (inputs and outputs) for pipelined
operation
• Byte Write capability
• Single 2.5V power supply
• Fast clock-to-output times
— 2.8 ns (for 225-MHz device)
— 3.2ns (for 200-MHz device)
— 3.5 ns (for 167-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Available in lead-free 100 TQFP, 119 BGA, and 165 fBGA
packages
• IEEE 1149.1 JTAG Boundary Scan
• Burst capability–linear or interleaved burst order
• “ZZ” Sleep Mode option and Stop Clock option
Functional Description
The CY7C1354CV25 and CY7C1356CV25 are 2.5V, 256K x
36 and 512K x 18 Synchronous pipelined burst SRAMs with
No Bus Latency™ (NoBL
™) logic, respectively. They are
designed to support unlimited true back-to-back Read/Write
operations with no wait states. The CY7C1354CV25 and
CY7C1356CV25 are equipped with the advanced (NoBL) logic
required to enable consecutive Read/Write operations with
data being transferred on every clock cycle. This feature
dramatically improves the throughput of data in systems that
require frequent Write/Read transitions. The CY7C1354CV25
and CY7C1356CV25 are pin-compatible with and functionally
equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle.
Write operations are controlled by the Byte Write Selects
(BWa–BWd
for
CY7C1354CV25
and
BWa–BWb
for
CY7C1356CV25) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
A0, A1, A
C
MODE
BWa
BWb
WE
CE1
CE2
CE3
OE
READ LOGIC
DQs
DQPa
DQPb
DQPc
DQPd
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
MEMORY
ARRAY
E
E
INPUT
REGISTER 0
ADDRESS
REGISTER 0
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
BURST
LOGIC
A0'
A1'
D1
D0
Q1
Q0
A0
A1
C
ADV/LD
ADV/LD
E
INPUT
REGISTER 1
S
E
N
S
E
A
M
P
S
E
CLK
CEN
WRITE
DRIVERS
BWc
BWd
ZZ
SLEEP
CONTROL
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
Logic Block Diagram–CY7C1354CV25 (256K x 36)
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