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MRF18030BR3 Datasheet(PDF) 2 Page - Motorola, Inc |
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MRF18030BR3 Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 8 page MRF18030BR3 MRF18030BSR3 2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) 2 3.9 4.5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.29 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs — 2 — S DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.3 — pF FUNCTIONAL TESTS (In Motorola Test Fixture) (2) Output Power, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz) P1dB 27 30 — Watts Common–Source Amplifier Power Gain @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz) Gps 13 14 — dB Drain Efficiency @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz) η 46.5 50 — % Input Return Loss @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz) IRL — –12 –9 dB Output Mismatch Stress @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f1 = 1930 – 1990 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) Device specifications obtained on a Production Test Fixture. |
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