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CSA1162Y-3E Datasheet(PDF) 2 Page - Continental Device India Limited |
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CSA1162Y-3E Datasheet(HTML) 2 Page - Continental Device India Limited |
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2 / 3 page  Continental Device India Limited Data Sheet Page 2 of 2 Total power dissipation at Tamb = 25°C Ptot max. 150 mW Storage temperature Tstg –50 to +150 ° C Junction temperature Tj max. 150 ° C CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector-emitter breakdown voltage –IC = 1 mA; IB = 0 –V(BR)CEO min 50 V Collector cut-off current –VCB = 50 V; IE = 0 –ICBO max. 100 nA Emitter cut-off current VEB = 5 V; IC = 0 IEBO max. 100 nA Saturation voltage –IC = 100 mA; –IB = 10 mA –VCEsat max. 0.3 V D.C. current gain IC = 2 mA; –VCE = 6 V hFE min. 70 max. 400 Y min. 120 max. 240 GR(G) min. 200 max. 400 Transition frequency VCE = 10 V; IC = 1 mA fT min. 80 MHz Collector output capacitance VCB = 10 V; IE = 0; f = 1 MHz Cob max. 7 pF Noise figure VCE = 6 V; IC = 0.1 mA f = 1 kHz; Rg = 10 kW NF max. 10 dB CSA1162 |
Similar Part No. - CSA1162Y-3E |
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