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2N1893S Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N1893S
Description  NPN LOW POWER SILICON TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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 1 page
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TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
Qualified Level
2N720A
2N1893
2N1893S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
All Devices
Units
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Base Voltage
VCBO
120
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Collector-Emitter Voltage (RBE = 10
Ω)
VCER
100
Vdc
Collector Current
IC
500
mAdc
2N720A 2N1893, S
Total Power Dissipation
@ TA = +25
0C (1)
@ TC = +25
0C (2)
PT
0.5
1.8
0.8
3.0
W
Operating & Storage Junction Temperature Range
TJ, Tsrg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
2N720A 2N1893, S
Unit
Thermal Resistance, Junction-to-Case
RθJC
97
58
0C/W
1) Derate linearly 2.86 mW/
0C for 2N720A, 4.57 mW/0C for 2N1893, S TA > 250C
2) Derate linearly 10.3 mW/
0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250C
TO-18 (TO-206AA)*
2N720A
TO-5*
2N1893, 2N1893S
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
V(BR)CEO
80
Vdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc, RBE = 10
V(BR)CER
100
Vdc
Collector-Base Cutoff Current
VCB = 120 Vdc
VCB = 90 Vdc
ICBO
10
10
µAdc
ηAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
VEB = 5.0 Vdc
IEBO
10
10
µAdc
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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