2N1893 datasheet(1/2 Pages) MICROSEMI

Part #	2N1893

Description	NPN LOW POWER SILICON TRANSISTOR

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Manufacturer	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA

NPN LOW POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/182

Devices

Qualified Level

2N720A

2N1893

2N1893S

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

All Devices

Units

Collector-Emitter Voltage

VCEO

80

Vdc

Collector-Base Voltage

VCBO

120

Vdc

Emitter-Base Voltage

VEBO

7.0

Vdc

Collector-Emitter Voltage (RBE = 10

Ω)

VCER

100

Vdc

Collector Current

IC

500

mAdc

2N720A 2N1893, S

Total Power Dissipation

@ TA = +25

0C (1)

@ TC = +25

0C (2)

PT

0.5

1.8

0.8

3.0

W

Operating & Storage Junction Temperature Range

TJ, Tsrg

-65 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

2N720A 2N1893, S

Unit

Thermal Resistance, Junction-to-Case

RθJC

97

58

0C/W

1) Derate linearly 2.86 mW/

0C for 2N720A, 4.57 mW/0C for 2N1893, S TA > 250C

2) Derate linearly 10.3 mW/

0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250C

TO-18 (TO-206AA)*

2N720A

TO-5*

2N1893, 2N1893S

*See appendix A for package

outline

ELECTRICAL CHARACTERISTICS (TA = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 30 mAdc

V(BR)CEO

80

Vdc

Collector-Emitter Breakdown Voltage

IC = 10 mAdc, RBE = 10

Ω

V(BR)CER

100

Vdc

Collector-Base Cutoff Current

VCB = 120 Vdc

VCB = 90 Vdc

ICBO

10

µAdc

ηAdc

Emitter-Base Cutoff Current

VEB = 7.0 Vdc

VEB = 5.0 Vdc

IEBO

10

µAdc

ηAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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