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SUB65P06 Datasheet(PDF) 2 Page - TEMIC Semiconductors |
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SUB65P06 Datasheet(HTML) 2 Page - TEMIC Semiconductors |
2 / 4 page SUP/SUB65P06-20 2 Siliconix P-39628—Rev. A, 28-Dec-94 Specifications (TJ = 25 _C Unless Otherwise Noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –250 mA –60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –2.0 –3.0 –4.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = –60 V, VGS = 0 V –1 A Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V, TJ = 125_C –50 mA VDS = –60 V, VGS = 0 V, TJ = 175_C –150 On-State Drain Currentb ID(on) VDS = –5 V, VGS = –10 V –120 A b VGS = –10 V, ID = –30 A 0.017 0.020 W Drain-Source On-State Resistanceb rDS(on) VGS = –10 V, ID = –30 A, TJ = 125_C 0.033 W VGS = –10 V, ID = –30 A, TJ = 175_C 0.042 Forward Transconductanceb gfs VDS = –15 V, ID = –30 A 25 S Dynamica Input Capacitance Ciss 4500 Output Capacitance Coss VGS = 0 V, VDS = –25 V, f = 1 MHz 870 pF Reversen Transfer Capacitance Crss 350 Total Gate Chargec Qg 85 120 Gate-Source Chargec Qgs VDS = –30 V, VGS = –10 V, ID = –65 A 24 nC Gate-Drain Chargec Qgd 22 Turn-On Delay Timec td(on) 15 40 Rise Timec tr VDD = –30 V, RL = 0.47 W 40 80 ns Turn-Off Delay Timec td(off) DD , L ID ] –65 A, VGEN = –10 V, RG = 2.5 W 65 120 ns Fall Timec tf 30 60 Source-Drain Diode Ratings and Characteristics (TC = 25_C)a Continuous Current Is –65 A Pulsed Current ISM –200 A Forward Voltageb VSD IF = –65 A, VGS = 0 V –1.1 –1.4 V Reverse Recovery Time trr 70 120 ns Peak Reverse Recovery Current IRM(REC) IF = –65 A, di/dt = 100 A/ms 7 9 A Reverse Recovery Charge Qrr 0.245 0.54 mC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. |
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