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MH1242 Datasheet(PDF) 4 Page - ATMEL Corporation |
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MH1242 Datasheet(HTML) 4 Page - ATMEL Corporation |
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4 / 22 page  MH1RT QualPack 4 Rev. 2 – Jan 2002 3. Technology Information 3.1 Wafer Process Technology Process Type (Name): CMOS 0.35 µm Rad Tolerant Base Material: Silicon Epi Substrate Wafer Thickness (without back grinding)725 µm Wafer Diameter 200mm Number Of Masks 15 Gate Oxide Material Silicon Dioxide Thickness 70A (optical for 3.3V) Polysilicon Number of Layers 1 Thickness 3200A Metal Number of Layers up to 4 Material: Ti TiN AlCu Layer 1/3 Thickness 400A + 800A + 5000A + 100A Ti + 1000A TiN Upper layer Thickness 400A + 800A + 8000A + 250A TiN Passivation Material SiO2/Si3N4 Thickness 11000A / 10000A |
Similar Part No. - MH1242 |
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Similar Description - MH1242 |
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