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2N1724 Datasheet(PDF) 2 Page - Microsemi Corporation

Part No. 2N1724
Description  NPN SILICON HIGH POWER TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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 2 page
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2N1722, 2N1724 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 2.0 Adc, VCE = 15 Vdc
IC = 5.0 Adc, VCE = 15 Vdc
IC = 100 mAdc, VCE = 15 Vdc
hFE
30
15
30
120
Collector-Emitter Saturation Voltage
IC = 2.0 Adc, IB = 200 mAdc
VCE(sat)
0.6
Vdc
Base-Emitter Saturation Voltage
IC = 2.0 Adc, IB = 200 mVdc
VBE(sat)
1.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500 mAdc, VCE = 15 Vdc; f = 10 MHz
h
fe
1.0
5.0
Output Capacitance
VCB = 15 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
550
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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