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2N1724 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N1724
Description  NPN SILICON HIGH POWER TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/262
Devices
Qualified Level
2N1722
2N1724
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
Value
Units
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Base Voltage
VCBO
175
Vdc
Emitter-Base Voltage
VEBO
10
Vdc
Collector Current
IC
5.0
Adc
Total Power Dissipation
@ TA = +25
0C(1)
@ TC = +100
0C (2)
PT
3.0
50
W
W
Temperature Range:
Operating
Storage Junction
TOP,
Tstg
175
-65 to +200
0C
1) Derate linearly 20 mW/
0C for TA between +250C and +1750C
2) Derate linearly 666 mW/
0C for TC between +1000C and +1750C
TO-61*
2N1724
TO-53*
2N1722
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
V(BR)CEO
80
Vdc
Emitter-Base Breakdown Voltage
IE = 10 mAdc
V(BR)EBO
10
Vdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
ICES
300
µAdc
Collector-Base Cutoff Current
VCB = 175 Vdc
ICBO
5.0
mAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
400
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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