NAND01GW3B2BZA6 datasheet(8/64 Pages) STMICROELECTRONICS

Part #	NAND01GW3B2BZA6

Description	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Summary description

NAND01G-B, NAND02G-B

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Summary description

The NAND Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories

that uses NAND cell technology. The devices range from 1 Gbit to 2 Gbits and operate with

either a 1.8V or 3V voltage supply. The size of a Page is either 2112 Bytes (2048 + 64

spare) or 1056 Words (1024 + 32 spare) depending on whether the device has a x8 or x16

bus width.

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

to other densities without changing the footprint.

Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of

NAND Flash devices it is strongly recommended to implement an Error Correction Code

(ECC).

The devices have hardware and software security features:

●

A Write Protect pin is available to give a hardware protection against program and

erase operations.

●

A Block Locking scheme is available to provide user code and/or data protection.

The devices feature an open-drain Ready/Busy output that can be used to identify if the

Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output

allows the Ready/Busy pins from several memories to be connected to a single pull-up

resistor.

A Copy Back Program command is available to optimize the management of defective

blocks. When a Page Program operation fails, the data can be programmed in another page

without having to resend the data to be programmed.

Each device has Cache Program and Cache Read features which improve the program and

read throughputs for large files. During Cache Programming, the device loads the data in a

Cache Register while the previous data is transferred to the Page Buffer and programmed

into the memory array. During Cache Reading, the device loads the data in a Cache

Register while the previous data is transferred to the I/O Buffers to be read.

All devices have the Chip Enable Don’t Care feature, which allows code to be directly

downloaded by a microcontroller, as Chip Enable transitions during the latency time do not

stop the read operation.

All devices have the option of a Unique Identifier (serial number), which allows each device

to be uniquely identified.

The Unique Identifier options is subject to an NDA (Non Disclosure Agreement) and so not

described in the datasheet. For more details of this option contact your nearest ST Sales

office.

The devices are available in the following packages:

●

TSOP48 (12 x 20mm) for all products

●

VFBGA63 (9.5 x 12 x 1mm, 0.8mm pitch) for 1Gb products

●

TFBGA63 (9.5 x 12 x 1.2mm, 0.8mm pitch) for 2Gb Dual Die products

In order to meet environmental requirements, ST offers the NAND01G-B and NAND02G-B

in ECOPACK® packages. ECOPACK packages are Lead-free. The category of second Level

Interconnect is marked on the package and on the inner box label, in compliance with

Similar Part No. - NAND01GW3B2BZA6

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	NAND01GW3B2BZA6E	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Numonyx B.V	NAND01GW3B2BZA6E	1Mb / 60P	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
Numonyx B.V	NAND01GW3B2BZA6E	1Mb / 67P	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory January 2010 Rev 5
STMicroelectronics	NAND01GW3B2BZA6F	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Numonyx B.V	NAND01GW3B2BZA6F	1Mb / 60P	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

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Similar Description - NAND01GW3B2BZA6

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	NAND01G-B2B	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
STMicroelectronics	NAND512-B	383Kb / 59P	512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory February 2005
Numonyx B.V	NAND04GW3B2B	1Mb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
STMicroelectronics	NAND04GW3B2B	501Kb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
Numonyx B.V	NAND01G-B2B	1Mb / 60P	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
	NAND01GR3B2C	1Mb / 67P	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory January 2010 Rev 5
	NAND04G-B2D	1Mb / 69P	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
	NAND02G-B2D	1Mb / 69P	2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
	NAND08GW3C2A	1Mb / 58P	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
	NAND08GW3C2B	1Mb / 60P	8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory

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