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2SC6015 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part No. 2SC6015
Description  NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications
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Maker  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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 2 page
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2SC6015
No.8558-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gain-Bandwidth Product
fT
VCE=2V, IC=500mA
280
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
50
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=3A, IB=60mA
90
135
mV
IC=4.5A, IB=90mA
135
205
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=3A, IB=60mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0A
15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
15
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0A
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
180
ns
Fall Time
tf
See specified Test Circuit.
25
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7008-003
VR
RB
VCC=5V
IC=20IB1= --20IB2=3A
VBE= --5V
+
+
50
INPUT
OUTPUT
RL
470
µF
100
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
Top View
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
9
7
3
5
2
1
8
4
6
0
5
4
2
3
1
0
0.2
0
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT09760
10mA
15mA
20mA
30mA
50mA
IB=0mA
5mA
VCE=2V
0
0.2
0.4
0.6
0.8
1.0
1.1
0.1
0.3
0.5
0.7
0.9
IT09761
40mA




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