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JAN2N4416A Datasheet(PDF) 1 Page - Microsemi Corporation

Part # JAN2N4416A
Description  N-CHANNEL J-FET
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

JAN2N4416A Datasheet(HTML) 1 Page - Microsemi Corporation

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TECHNICAL DATA
N-CHANNEL J-FET
Qualified per MIL-PRF-19500/428
Devices
Qualified Level
2N4416A
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
Parameters / Test Conditions
Symbol
2N4416A
Unit
Gate-Source Voltage
VGS
-35
Vdc
Drain-Source Voltage
VDS
35
Vdc
Drain-Gate Voltage
VDG
35
Vdc
Gate Current
IG
10
mAdc
Power Dissipation
TA = +25
0C (1)
PT
300
mWdc
Operating Junction & Storage Temperature Range
Top, Tstg
-65 to +200
0C
(1) Derate linearly 1.7 mW/
0C for T
A > +25
0C.
TO-72*
(TO-206AF)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = +25
0C unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Units
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0
µAdc
V(BR)GSS
-35
Vdc
Gate Reverse Current
VDS = 0, VGS = 20 Vdc
IGSS
-0.1
ηAdc
Drain Current
VDS = 15 Vdc
IDSS
5
15
mAdc
Gate-Source Voltage
VDS = 15 Vdc, ID = 0.5 mAdc
VGS
-1
-5.5
Vdc
Gate-Source Cutoff Voltage
VDS = 15 Vdc, ID = 1.0
ηAdc
VGS(off)
-2.5
-6.0
Vdc
Gate-Source Forward Voltage
VDS = 0 Vdc, IG = 1.0 mAdc
VGSF
1
Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


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