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JAN2N4416A Datasheet(PDF) 1 Page - Microsemi Corporation |
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JAN2N4416A Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 2 page TECHNICAL DATA N-CHANNEL J-FET Qualified per MIL-PRF-19500/428 Devices Qualified Level 2N4416A JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS Parameters / Test Conditions Symbol 2N4416A Unit Gate-Source Voltage VGS -35 Vdc Drain-Source Voltage VDS 35 Vdc Drain-Gate Voltage VDG 35 Vdc Gate Current IG 10 mAdc Power Dissipation TA = +25 0C (1) PT 300 mWdc Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 0C (1) Derate linearly 1.7 mW/ 0C for T A > +25 0C. TO-72* (TO-206AF) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = +25 0C unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Units Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 µAdc V(BR)GSS -35 Vdc Gate Reverse Current VDS = 0, VGS = 20 Vdc IGSS -0.1 ηAdc Drain Current VDS = 15 Vdc IDSS 5 15 mAdc Gate-Source Voltage VDS = 15 Vdc, ID = 0.5 mAdc VGS -1 -5.5 Vdc Gate-Source Cutoff Voltage VDS = 15 Vdc, ID = 1.0 ηAdc VGS(off) -2.5 -6.0 Vdc Gate-Source Forward Voltage VDS = 0 Vdc, IG = 1.0 mAdc VGSF 1 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 |
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