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PMEG3015EH Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMEG3015EH Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 9 page 9397 750 14917 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 8 April 2005 3 of 9 Philips Semiconductors PMEG3015EH; PMEG3015EJ 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifiers [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating are available on request. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Table 6: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air PMEG3015EH [1] [2] - - 330 K/W [2] [3] - - 150 K/W PMEG3015EJ [1] [2] - - 350 K/W [2] [3] - - 150 K/W Rth(j-sp) thermal resistance from junction to solder point PMEG3015EH - - 60 K/W PMEG3015EJ - - 55 K/W Table 8: Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF =1mA [1] - 125 160 mV IF =10mA [1] - 185 220 mV IF = 100 mA [1] - 255 290 mV IF = 500 mA [1] - 330 380 mV IF =1A [1] - 400 480 mV IF = 1.5 A [1] - 440 550 mV IR reverse current VR = 10 V - 60 150 µA VR = 30 V - 400 1000 µA Cd diode capacitance VR = 1 V; f = 1 MHz - 60 72 pF |
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