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STP95N04 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STP95N04
Description  N-CHANNEL 40V - 5.4mohm - 80A - DPAK - TO-220 STripFET Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP95N04 Datasheet(HTML) 4 Page - STMicroelectronics

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2 Electrical characteristics
STD95N04 - STP95N04
4/14
Table 5.
Switching times
Table 6.
Source drain diode
(1) Current limited by package
(2) Pulse width limited by safe operating area
(3) ISD ≤ 80 A, di/dt ≤ 400A/µs, VDS ≤ V(BR)DSS, Tj≤ Tjmax
(4) Starting Tj=25°C, Id =40A, Vdd=30V
(5) When mounted on 1inch² FR4 2Oz Cu board
(6)Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD=20V, ID= 40A,
RG=4.7Ω, VGS=10V
(see Figure 12)
15
50
ns
ns
td(off)
tf
Turn-off Delay Time
FallTime
VDD=20V, ID= 40A,
RG=4.7Ω, VGS=10V
(see Figure 12)
40
15
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM Note 2
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
VSDNote 6
Forward on Voltage
ISD=80A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=80A, di/dt = 100A/µs,
VDD=30V, Tj=150°C
45
60
2.8
ns
nC
A


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