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MT5C1005 Datasheet(PDF) 4 Page - Austin Semiconductor

Part # MT5C1005
Description  256K x 4 SRAM SRAM MEMORY ARRAY
Download  13 Pages
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Manufacturer  AUSTIN [Austin Semiconductor]
Direct Link  http://www.austinsemiconductor.com
Logo AUSTIN - Austin Semiconductor

MT5C1005 Datasheet(HTML) 4 Page - Austin Semiconductor

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SRAM
MT5C1005
Austin Semiconductor, Inc.
MT5C1005
Rev. 3.1 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < T
C < 125
oC; V
CC = 5V +10%)
MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
READ CYCLE
READ cycle time
tRC
20
25
35
45
ns
Address access time
tAA
20
25
35
45
ns
Chip Enable access time
tACE
20
25
35
45
ns
Output hold from address change
tOH
3333
ns
Chip Enable to output in Low-Z
tLZCE
3333
ns
4, 6, 7
Chip disable to output in High-Z
tHZCE
10
12
20
25
ns
4, 6, 7
Chip Enable to power-up time
tPU
0000
ns
4
Chip disable to power-down time
tPD
20
25
35
45
ns
4
Output Enable access time
tAOE
8
102025
ns
Output Enable to output in Low-Z
tLZOE
0000
ns
4, 6, 7
Output disable to output in High-Z
tHZOE
8
10
20
25
ns
4, 6, 7
WRITE CYCLE
WRITE cycle time
tWC
20
25
35
45
ns
Chip Enable to end of write
tCW
15
20
30
35
ns
Address valid to end of write
tAW
15
20
30
35
ns
Address setup time
tAS
0000
ns
Address hold from end of write
tAH
0000
ns
WRITE pulse width
tWP
15
20
30
35
ns
Data setup time
tDS
12
15
20
25
ns
Data hold time
tDH
0000
ns
Write disable to output in Low-Z
tLZWE
3333
ns
4, 6, 7
Write Enable to output in High-Z
tHZWE
0
8
0
10
0
15
0
20
ns
4, 6, 7
-35
-45
DESCRIPTION
-20
SYMBOL
-25


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