FEATURES
• High Output Power: P1dB = 39.5dBm (Typ.)
• High Gain: G1dB = 10.0dB (Typ.)
• High PAE:
ηadd = 37% (Typ.)
• Low IM3 = -46dBc@Po = 28.5dBm
• Broad Band: 5.9 ~ 6.4GHz
• Impedance Matched Zin/Zout = 50
Ω
• Hermetically Sealed Package
1
Edition 1.3
August 2004
FLM5964-8F
C-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
42.8
-65 to +175
175
Tc = 25°C
V
V
W
°C
°C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100
Ω.
DESCRIPTION
The FLM5964-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
-
3400
5200
-
3400
-
-0.5
-1.5
-3.0
-5.0
-
-
9.0
10.0
-
-37
-
38.5
39.5
-
VDS = 5V, IDS = 170mA
VDS = 5V, IDS = 2200mA
VDS = 5V, VGS = 0V
IGS = -170µA
VDS =10V,
IDS = 0.65IDSS (Typ.),
f = 5.9 ~ 6.4 GHz,
ZS=ZL= 50 ohm
f = 6.4 GHz,
∆f = 10 MHz
2-Tone Test
Pout = 28.5dBm S.C.L.
mA
mS
V
dB
%
-44
-46
-
dBc
dBm
V
gm
Vp
VGSO
P1dB
G1dB
Drain Current
-
2200
2600
mA
Idsr
IM3
ηadd
Gain Flatness
--
±0.6
dB
∆G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°C)
Channel to Case
Thermal Resistance
-
3.0
3.5
°C/W
Rth
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE: IB
10V x Idsr x Rth
Channel Temperature Rise
--
80
°C
∆Tch