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IRGB4B60KD1 Datasheet(PDF) 4 Page - International Rectifier

Part No. IRGB4B60KD1
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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 4 page
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IRGB/S/SL4B60KD1
4
www.irf.com
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
0
2
4
6
8
10
12
VCE (V)
0
5
10
15
20
25
30
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
8
10
12
VCE (V)
0
5
10
15
20
25
30
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
8
10
12
VCE (V)
0
5
10
15
20
25
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VF (V)
0
5
10
15
20
25
30
35
-40°C
25°C
150°C




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