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IRHLUB740Z4 Datasheet(PDF) 1 Page - International Rectifier |
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IRHLUB740Z4 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current 0.8 ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current 0.5 IDM Pulsed Drain Current ➀ 3.2 PD @ TC = 25°C Max. Power Dissipation 0.6 W Linear Derating Factor 0.0045 W/°C VGS Gate-to-Source Voltage ±10 V EAS Single Pulse Avalanche Energy ➁ 2.0 mJ IAR Avalanche Current ➀ 0.8 A EAR Repetitive Avalanche Energy ➀ 0.06 mJ dv/dt Peak Diode Recovery dv/dt ➂ 4.0 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (for 5s) Weight 43 (Typical) mg oC A 02/02/04 www.irf.com 1 Product Summary Part Number Radiation Level RDS(on) ID IRHLUB770Z4 100K Rads (Si) 0.55 Ω 0.8A IRHLUB730Z4 300K Rads (Si) 0.55 Ω 0.8A IRHLUB740Z4 600K Rads (Si) 0.55 Ω 0.8A IRHLUB780Z4 1000K Rads (Si) 0.55 Ω 0.8A For footnotes refer to the last page Pre-Irradiation RADIATION HARDENED IRHLUB770Z4 LOGIC LEVEL POWER MOSFET 60V, N-CHANNEL SURFACE MOUNT (UB) UB Features: n 5V CMOS and TTL Compatible n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight n Complimentary P-Channel Available - IRHLUB7970Z4 International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. c TECHNOLOGY PD - 95813 |
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