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K7N323601M-FC13 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K7N323601M-FC13 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 24 page K7N323645M 1Mx36 & 2Mx18 Pipelined NtRAMTM - 1 - Rev 2.0 Nov. 2003 K7N321845M Document Title 1Mx36 & 2Mx18-Bit Pipelined N tRAMTM The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 0.5 1.0 1.1 2.0 Remark Preliminary Preliminary Preliminary Preliminary Preliminary Preliminary Final Final Final History 1. Initial document. 1. Add 165FBGA package 1.Update JTAG scan order 2. Speed bin merge. From K7N3236(18)49M to K7N3236(18)45M 3. AC parameter change. tOH(min)/tLZC(min) from 0.8 to 1.5 at -25 tOH(min)/tLZC(min) from 1.0 to 1.5 at -22 tOH(min)/tLZC(min) from 1.0 to 1.5 at -20 1. Change pin out for 165FBGA - x18/x36 ; 11B => from A to NC , 2R ==> from NC to A 1. Insert pin at JTAG scan order of 165FBGA in connection with pin out change - x18/x36 ; insert Pin ID of 2R to BIT number of 69 1. Add Icc, Isb, Isb1 and Isb2 values. 1. Final datasheet release. 1. Change the Stand-by current (Isb) Before After Isb - 25 : 120 170 - 22 : 110 160 - 20 : 100 150 - 16 : 90 140 - 15 : 90 140 - 13 : 90 140 Isb1 : 90 110 Isb2 : 80 100 1. Delete the 119BGA package 2. Delete the 225MHz and 150MHz speed bin Draft Date May. 10. 2001 Aug. 29. 2001 Dec. 31. 2001 Feb. 14. 2002 Apr. 20. 2002 May. 10. 2002 Sep. 26. 2002 Oct. 17, 2003 Nov. 18, 2003 |
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