US6M1

Transistors

5/7

P-ch

Electrical characteristic curves

10

100

1000

0.01

0.1

1

10

100

DRAIN-SOURCE VOLTAGE :

Ta

=25°C

f

=1MHz

=0V

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

1

10

1000

10000

100

0.01

0.1

1

10

DRAIN CURRENT :

Ta

=25°C

= −15V

= −4.5V

=10Ω

Pulsed

Fig.2 Switching Characteristics

Ta

=25°C

= −15V

= −1A

=10Ω

Pulsed

0

0.5

1

1.5

2

2.5

3

TOTAL GATE CHARGE : Qg (nC)

0

1

2

3

4

5

6

7

8

Fig.3 Dynamic Input Characteristics

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

GATE-SOURCE VOLTAGE :

0.001

0.01

0.1

1

10

Fig.4 Typical Transfer Characteristics

Ta

=25°C

= −10V

Pulsed

02468

10

12

GATE-SOURCE VOLTAGE :

0

250

500

750

1000

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-Source Voltage

Ta

=25°C

Pulsed

= −1A

= −0.5A

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

SOURCE-DRAIN VOLTAGE :

0.01

0.1

1

10

Fig.6 Source Current vs.

Source-Drain Voltage

=0V

Pulsed

Ta

= −25°C

Ta

=25°C

Ta

=75°C

Ta

=125°C

1000

10000

100

0.01

0.1

1

10

DRAIN CURRENT :

Fig.7 Static Drain-Source

On-State Resistance

vs. Drain Current (

= −4.5V

Pulsed

Ta

= −25°C

Ta

=25°C

Ta

=75°C

Ta

=125°C

1000

10000

100

0.01

0.1

1

10

DRAIN CURRENT :

Fig.8 Static Drain-Source

On-State Resistance

vs. Drain Current (

= −4V

Pulsed

Ta

= −25°C

Ta

=25°C

Ta

=75°C

Ta

=125°C

1000

10000

100

0.01

0.1

1

10

DRAIN CURRENT :

Fig.9 Static Drain-Source

On-State Resistance

vs. Drain Current (

= −2.5V

Pulsed

Ta

= −25°C

Ta

=25°C

Ta

=75°C

Ta

=125°C