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PBSS4240DPN Datasheet(PDF) 6 Page - NXP Semiconductors |
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PBSS4240DPN Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 2003 Feb 20 6 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN handbook, halfpage 02 2 0 0.4 0.8 1.2 1.6 0.4 VCE (V) IC (A) 0.8 1.2 1.6 MHC475 (7) (10) (8) (6) (5) (4) (9) (1) (2) (3) Fig.6 Collector current as a function of collector-emitter voltage; typical values. (1) IB = 30 mA. (2) IB = 27 mA. (3) IB = 24 mA. (4) IB = 21 mA. (5) IB = 18 mA. (6) IB = 15 mA. (7) IB = 12 mA. (8) IB = 9 mA. (9) IB = 6 mA. (10) IB = 3 mA. TR1 (NPN); Tamb =25 °C. handbook, halfpage MHC476 103 102 1 10−1 10 10−1 1 RCEsat ( Ω) IC (mA) 10 102 103 104 (3) (1) (2) Fig.7 Collector-emitter equivalent on-resistance as a function of collector current; typical values. TR1 (NPN); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. |
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