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MT58L256L32F Datasheet(PDF) 11 Page - Micron Technology |
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MT58L256L32F Datasheet(HTML) 11 Page - Micron Technology |
11 / 27 page 11 8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM Micron Technology, Inc., reserves the right to change products or specifications without notice. MT58L512L18F_2.p65 – Rev. 7/00 ©2000, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM FBGA PIN DESCRIPTIONS (continued) x18 x32/x36 SYMBOL TYPE DESCRIPTION 9A 9A ADV# Input Synchronous Address Advance: This active LOW input is used to advance the internal burst counter, controlling burst access after the external address is loaded. A HIGH on ADV# effectively causes wait states to be generated (no address advance). To ensure use of correct address during a WRITE cycle, ADV# must be HIGH at the rising edge of the first clock after an ADSP# cycle is initiated. 9B 9B ADSP# Input Synchronous Address Status Processor: This active LOW input interrupts any ongoing burst, causing a new external address to be registered. A READ is performed using the new address, independent of the byte write enables and ADSC#, but dependent upon CE#, CE2, and CE2#. ADSP# is ignored if CE# is HIGH. Power- down state is entered if CE2 is LOW or CE2# is HIGH. 8A 8A ADSC# Input Synchronous Address Status Controller: This active LOW input interrupts any ongoing burst, causing a new external address to be registered. A READ or WRITE is performed using the new address if CE# is LOW. ADSC# is also used to place the chip into power-down state when CE# is HIGH. 1R 1R MODE Input Mode: This input selects the burst sequence. A LOW on this (LB0#) input selects “linear burst.” NC or HIGH on this input selects “interleaved burst.” Do not alter input state while device is operating. (a) 10J, 10K, (a) 10J, 10K, DQa Input/ SRAM Data I/Os: For the x18 version, Byte “a” is associated DQas; 10L, 10M, 11D, 10L, 10M, 11J, Output Byte “b” is associated with DQbs. For the x32 and x36 versions, 11E, 11F, 11G 11K, 11L, 11M Byte “a” is associated with DQas; Byte “b” is associated with DQbs; (b) 1J, 1K, (b) 10D, 10E, DQb Byte “c” is associated with DQcs; Byte “d” is associated with DQds. 1L, 1M, 2D, 10F, 10G, 11D, Input data must meet setup and hold times around the rising edge 2E, 2F, 2G 11E, 11F, 11G of CLK. (c) 1D, 1E, DQc 1F, 1G, 2D, 2E, 2F, 2G (d) 1J, 1K, 1L, DQd 1M, 2J, 2K, 2L, 2M 11C 11N NC/DQPa NC/ No Connect/Parity Data I/Os: On the x32 version, these are No 1N 11C NC/DQPb I/O Connect (NC). On the x18 version, Byte “a” parity is DQPa; Byte “b” – 1C NC/DQPc parity is DQPb. On the x36 version, Byte “a” parity is DQPa; Byte – 1N NC/DQPd “b” parity is DQPb; Byte “c” parity is DQPc; Byte “d” parity is DQPd. 4D, 4E, 4F, 4D, 4E, 4F, VDD Supply Power Supply: See DC Electrical Characteristics and Operating 4G, 4H, 4J, 4G, 4H, 4J, Conditions for range. 4K, 4L, 4M, 4K, 4L, 4M, 8D, 8E, 8F, 8D, 8E, 8F, 8G, 8H, 8J, 8G, 8H, 8J, 8K, 8L, 8M 8K, 8L, 8M (continued on next page) |
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