SP8M5

Transistors

2/5

N-ch

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

−

Typ.

Max.

Unit

Conditions

∗

∗

∗

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

∗Pulsed

−±10

30

−−

−−

1

1.0

−

2.5

V

−

−

m

Ω

−

−−

S

−−

pF

=10V

−−

pF

=0V

−−

pF

f

=1MHz

=10V

=10Ω

−−

ns

−−

ns

−−

ns

−−

ns

−

nC

−−

nC

=5V

−−

nC

=6.0A

21

28

30

41

33

45

4.0

520

150

95

9

=5.00Ω

21

36

13

7.2

1.8

10.1

2.8

Body diode characteristics (Source-Drain Characteristics) (Ta=25

°C)

−−

1.2

V

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗

Forward voltage

∗Pulsed