FLASH MEMORY

3

K9F5608D0D

K9F5608R0D

K9F5608U0D

GENERAL DESCRIPTION

FEATURES

• Voltage Supply

- 1.8V device(K9F5608R0D) : 1.65~1.95V

- 2.65V device(K9F5608D0D) : 2.4~2.9V

- 3.3V device(K9F5608U0D) : 2.7 ~ 3.6 V

• Organization

- Memory Cell Array

-(32M + 1024K)bit x 8 bit

- Data Register

- (512 + 16)bit x 8bit

• Automatic Program and Erase

- Page Program

-(512 + 16)Byte

- Block Erase :

- (16K + 512)Byte

• Page Read Operation

- Page Size

- (512 + 16)Byte

- Random Access

: 15

µs(Max.)

- Serial Page Access : 50ns(Min.)

• Fast Write Cycle Time

- Program time : 200

µs(Typ.)

- Block Erase Time : 2ms(Typ.)

32M x 8 Bit NAND Flash Memory

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance

: 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Intelligent Copy-Back

• Unique ID for Copyright Protection

• Package

- K9F5608D(U)0D-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F5608X0D-JCB0/JIB0

63- Ball FBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)

- Pb-free Package

- K9F5608U0D-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F5608U0D-F(WSOPI ) is the same device as

K9F5608U0D-P(TSOP1) except package type.

Offered in 32Mx8bit , the K9F5608X0D is 256M bit with spare 8M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its

NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed

in typical 200

µs on a 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page

can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command

input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal

verification and margining of data. Even the write-intensive systems can take advantage of the K9F5608X0D

′s extended reliability of

100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F5608X0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable

applications requiring non-volatility.

PRODUCT LIST

Part Number

Vcc Range

Organization

PKG Type

K9F5608R0D-J

1.65 ~ 1.95V

X8

FBGA

K9F5608D0D-P

2.4 ~ 2.9V

TSOP1

K9F5608D0D-J

FBGA

K9F5608U0D-P

2.7 ~ 3.6V

TSOP1

K9F5608U0D-J

FBGA

K9F5608U0D-F

WSOP1