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PI74STX1G79CX Datasheet(PDF) 3 Page - Pericom Semiconductor Corporation |
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PI74STX1G79CX Datasheet(HTML) 3 Page - Pericom Semiconductor Corporation |
3 / 5 page 3 PS8569A 01/31/02 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 PI74STX1G79 SOTiny Gate STX Single Positive Edge-TriggeredD-TypeFlip-Flop Notes: 3. TA =+25°C,f=1MHz 4. CPD is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption (ICCD) at no output loading and operating at 50% duty cycle (see Figure 2). CPD is related to ICCD dynamic operating current by the expression: ICCD = (CPD)(VCC)(fIN) + (ICC static). l o b m y Sr e t e m a r a P. p y T. x a Ms ti n Us n o it i d n o C C N I e c n a ti c a p a C t u p n I3 F p V C C V , n e p O = N I V r o V 0 = C C C T U O e c n a ti c a p a C t u p t u O4 V C C V , V 3 . 3 = N I V r o V 0 = C C C D P e c n a ti c a p a C n o it a p i s si D r e w o P ) 4 ( 8 0 1 2 1 4 1 V C C V 8 . 1 = V C C V 5 . 2 = V C C V 3 . 3 = V C C V 0 . 5 = Capacitance(3) l o b m y Sr e t e m a r a PV C C ) V (s n o it i d n o C TA C ° 5 2 + = TA o t C ° 0 4 = C ° 5 8 + s ti n U . g i F . o N . n i M. p y T. x a M. n i M. x a M f X A M y c n e u q e r F k c o l C m u m i x a M5 1 . 0 ± 8 . 1 2 . 0 ± 5 . 2 3 . 0 ± 3 . 3 5 . 0 ± 0 . 5 CL , F p 0 5 = RL 5 = 0 s m h o 0 0 0 1 5 2 1 0 5 1 0 5 1 0 0 1 5 2 1 0 5 1 0 5 1 z H M 1 3 t H L P , t L H P Q o t K L C y al e D n o it a g a p o r P T U O 5 1 . 0 ± 8 . 1 2 . 0 ± 5 . 2 3 . 0 ± 3 . 3 5 . 0 ± 0 . 5 CL , F p 5 1 = RL = 1 m h o M 0 . 3 8 . 1 5 . 1 0 . 1 6 . 6 7 . 3 8 . 2 1 . 2 2 . 7 1 . 4 2 . 3 6 . 2 0 . 3 8 . 1 5 . 1 0 . 1 9 . 7 5 . 4 5 . 3 9 . 2 s n 1 3 3 . 0 ± 3 . 3 5 . 0 ± 0 . 5 CL , F p 0 5 = RL =50 s m h o 0 5 . 1 0 . 1 3 . 3 4 . 2 5 . 4 2 . 3 5 . 1 0 . 1 0 . 5 5 . 3 1 3 tS D o t K L C , e m i T p u t e S N I 5 1 . 0 ± 8 . 1 2 . 0 ± 5 . 2 3 . 0 ± 3 . 3 5 . 0 ± 0 . 5 CL , F p 0 5 = RL =50 s m h o 0 0 . 4 0 . 2 5 . 1 1 . 1 0 . 3 5 . 1 1 . 1 9 . 0 1 4 tH , e m i T d l o HD o t K L C N I 5 1 . 0 ± 8 . 1 2 . 0 ± 5 . 2 3 . 0 ± 3 . 3 5 . 0 ± 0 . 5 CL , F p 0 5 = RL 5 = 0 s m h o 0 4 . 0 5 . 0 5 . 0 5 . 0 0 0 0 0 4 . 0 5 . 0 5 . 0 5 . 0 1 4 tW K L C , h t d i W e sl u P5 1 . 0 ± 8 . 1 2 . 0 ± 5 . 2 3 . 0 ± 3 . 3 5 . 0 ± 0 . 5 CL , F p 0 5 = RL =50 s m h o 0 5 . 2 5 . 2 5 . 2 5 . 2 5 . 2 5 . 2 5 . 2 5 . 2 1 4 ACElectricalCharacteristics |
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