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NCS2535DTG Datasheet(PDF) 3 Page - ON Semiconductor |
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NCS2535DTG Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 12 page NCS2535 http://onsemi.com 3 ATTRIBUTES Characteristics Value ESD Human Body Model Machine Model Charged Device Model 2.0 kV (Note 1) 200 V 1.0 kV Moisture Sensitivity (Note 2) Level 1 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in 1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV. 2. For additional information, see Application Note AND8003/D. MAXIMUM RATINGS Parameter Symbol Rating Unit Power Supply Voltage VS 11 Vdc Input Voltage Range VI vVS Vdc Input Differential Voltage Range VID vVS Vdc Output Current IO 100 mA Maximum Junction Temperature (Note 3) TJ 150 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Range Tstg −60 to +150 °C Power Dissipation PD (See Graph) mW Thermal Resistance, Junction−to−Air RqJA 156 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 150 °C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the “overheated’’ condition for an extended period can result in device damage. To ensure proper operation, it is important to observe the derating curves. Figure 3. Power Dissipation vs. Temperature 1400 1000 800 600 400 0 −50 25 100 150 Ambient Temperature (C) 1200 200 −25 0 75 125 50 1800 1600 |
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