EMF17 / UMF17N

Transistors

Rev.A

2/4

Absolute maximum ratings (Ta=25

°C)

Tr1

Parameter

Symbol

Tj

Tstg

Limits

−60

−50

−6

−150

150

−55 to +150

150 (TOTAL)

Unit

V

V

V

mA

°C

°C

mW

∗

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Collector power dissipation

∗ 120mW per element must not be exceeded.

DTr2

Parameter

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

Symbol

Tj

Tstg

Limits

50

−10 to +20

100

100

150(TOTAL)

150

−55 to +150

∗1

∗2

Unit

V

V

mA

mA

mW

°C

°C

Supply voltage

Input voltage

Collector current

Output current

Power dissipation

Junction temperature

Range of storage temperature

Electrical characteristics (Ta=25

°C)

Tr1

Parameter

Symbol

Cob

Min.

−60

−50

−6

−

−

180

−

−

−

−

−

−

−

−

−

−

140

4

−

−

−

−0.1

−0.1

390

−0.5

−

5

−50µA

−1mA

−50µA

−60V

−6V

−50mA/−5mA

V

V

µA

µA

−

V

MHz

pF

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

DTr2

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗

Transition frequency

−

250

−

1.54

2.86

MHz

∗ Characteristics of built-in transistor.

−−

0.5

V

Input voltage

3.0

−−

V

−

100

300

mV

Output voltage

−−

3.8

mA

=5V

Input current

−−

0.5

Output current

2.2

k

Ω

−

Input resistance

20

−−

−

DC current gain

−

0.8

1.0

1.2

−

Resistance ratio