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UMF17N Datasheet(PDF) 2 Page - Rohm |
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UMF17N Datasheet(HTML) 2 Page - Rohm |
2 / 5 page EMF17 / UMF17N Transistors Rev.A 2/4 Absolute maximum ratings (Ta=25 °C) Tr1 Parameter Symbol VCBO VCEO VEBO IC Tj Tstg PC Limits −60 −50 −6 −150 150 −55 to +150 150 (TOTAL) Unit V V V mA °C °C mW ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Collector power dissipation ∗ 120mW per element must not be exceeded. DTr2 Parameter ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. Symbol VCC VIN IC IO PC Tj Tstg Limits 50 −10 to +20 100 100 150(TOTAL) 150 −55 to +150 ∗1 ∗2 Unit V V mA mA mW °C °C Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Electrical characteristics (Ta=25 °C) Tr1 Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. −60 −50 −6 − − 180 − − − − − − − − − − 140 4 − − − −0.1 −0.1 390 −0.5 − 5 VIC = −50µA IC = −1mA IE = −50µA VCB = −60V VEB = −6V VCE = −6V, IC = −1mA VCE = −12V, IE = 2mA, f = 100MHz IC/IB = −50mA/−5mA VCB = −12V, IE = 0A, f = 1MHz V V µA µA − V MHz pF Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance DTr2 Parameter Symbol Min. Typ. Max. Unit Conditions ∗ Transition frequency fT − 250 − 1.54 2.86 MHz VCE =10V, IE=−5mA, f=100MHz ∗ Characteristics of built-in transistor. VI(off) −− 0.5 V VCC =5V, IO=100µA Input voltage VI(on) 3.0 −− V VO =0.3V, IO=20mA VO(on) − 100 300 mV VO =10mA, II=0.5mA Output voltage II −− 3.8 mA VI =5V Input current IO(off) −− 0.5 µAVCC=50V, VI=0V Output current R1 2.2 k Ω − Input resistance GI 20 −− − VO =5V, IO=20mA DC current gain − R2/R1 0.8 1.0 1.2 − Resistance ratio |
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Similar Description - UMF17N |
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